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          NXP Semiconductors 1PS79SB10 Schottky barrier single diode 1PS79SB10 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved Product data sheet 14 August 2012 2 / 8 3. Ordering information Table 3. Ordering information Package Type number Name Description Version 1PS79SB10 SOD523 plastic surface-mounted package; 2 leads SOD523 4. Marking Table 4. Marking codes Type number Marking code 1PS79SB10 F 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 30 V IF forward current - 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA IFSM non-repetitive peak forward current tp < 10 ms; T j(init) = 25 °C - 600 mA Tj junction temperature - 125 °C Tamb ambient temperature -65 125 °C Tstg storage temperature -65 150 °C 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 450 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. |